David Krix

Curriculum Vitae

Experience

01.01.2006 - Present

Post-graduate studies at University of Duisburg-Essen

Faculty of Physics, Duisburg, Germany
Design und building of a UHV system for surface science,
Study of the non-adiabacity of certain surface reactions

1999-2005

Internet and computer services, liquid pixels GbR, Oberhausen

active in management, HTML and PHP design, and server administration

09.1999-08.2000

Johanniter Unfallhilfe Oberhausen

Community service, driving ambulance cars

Education

01.01.2006 - Present

Post-graduate studies at University of Duisburg-Essen

Faculty of Physics, Duisburg, Germany
Study of non-adiabatic dynamics

2000-2005

Physics student at University of Duisburg-Essen

Faculty of Physics, Duisburg, Germany
Diplomphysiker (November 2005), Grade 1.2, (report)

1990-1999

Sophie-Scholl-Gymnasiums, Oberhausen, Germany

Abitur (July 1999), Grade 1.7

08.1996-01.1997

North Side High School, Fort Wayne, IN

As part of an exchange program by ICX

Presentations

• "Chemical interaction of H and D atoms with Ag/H:Si(111) thin film diodes", Sonderforschungsbereich 616, International Workshop 2006, Schloss Eichholz, Köln-Wesseling, September 25, 2006
• "Influence of the isotope effect on chemicurrent detection" (with Ramona Nünthel and Hermann Nienhaus), DPG spring meeting and EPS 21st General Conference, Dresden, Germany, March 26, 2006
• "Properties of thin film Ag/Si(111) Schottky diodes upon exposure to atomic hydrogen" (with Ramona Nünthel and Hermann Nienhaus), ECOSS 23, Berlin, September 4, 2005

Publications

• Stimuli-responsive track-etched membranes via surface-initiated controlled radical polymerization: Influence of grafting density and pore size, F. Tomicki, D. Krix, H. Nienhaus, M. Ulbricht, J. Membr. Sci. 337, 124 (2011).
• Electronic excitations in magnesium epitaxy: Experiment and theory, U. Hagemann, M. Timmer, D. Krix, P. Kratzer, and H. Nienhaus, Phys. Rev. B 82, 155420 (2010).
• Electronic excitations generated by the deposition of Mg on Mg films, U. Hagemann, D. Krix, and H. Nienhaus, Phys. Rev. Lett. 104, 028301 (2010).
• Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films, M. Mehta, M. Ruth, K. A. Piegdon, D. Krix, H. Nienhaus, and C. Meier, J. Vac. Scie. Technol. B 27, 2097-2101 (2009).
• Chemicurrent measurements using alkali metal covered Pd/p-Si(001) Schottky diodes, D. Krix, K. Huba and H. Nienhaus, J. Vac. Scie. Technol. A 27, 918.922 (2009).
• Ultrathin K/p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers, K. Huba, D. Krix, C. Meier and H. Nienhaus, J. Vac. Scie. Technol. A 27, 889-894 (2009).
• Adjustment of wear particle size distribution of DLC coatings for tribological metal-on-metal pairing in artificial hip joints, B. Stamm, B. Kuzun, O. Filipov, S. Reuter, I. Erdmann, F. Deuerler, D. Krix, K. Huba, H. Nienhaus, and V. Buck, Materialwiss. Werkst. 40, 98-100 (2009).
•  "Generation of hot charge carriers by adsorption of hydrogen and deuterium atoms on a silver surface", D. Krix, R. Nünthel, and H. Nienhaus, Phys. Rev. B 75, 073410 (2007).

  The generation of hot charge carriers during adsorption of atomic hydrogen and atomic deuterium on Ag has been investigated by chemicurrent measurements using thin-metal film Ag/p-Si(111) Schottky diodes. The detected currents are due to nonadiabatic dissipation of chemical energy and exhibit a strong isotope effect. The chemicurrent efficiency is found to be 3.6 times larger for atomic hydrogen adsorption than atomic deuterium. The isotope effect does not depend on the metal film thickness of the device. The results are in excellent agreement with the electronic friction model of chemicurrents [Phys. Rev. Lett. 88, 166802 (2002)] and give a temperature parameter of 1690  K for the Boltzmann-type energy distribution of the hot charge carriers excited by atomic hydrogen adsorption on Ag.

• Varying the Schottky barrier of thin film Mg/H:p-Si(111), S. Glass, D. Krix, and H. Nienhaus, J. Vac. Scie. Technol. A 25, 950 (2007).
• Chemical interaction of H and D atoms with Ag/H:p-Si(111) thin film diodes, D. Krix, R. Nünthel, and H. Nienhaus, J. Vac. Scie. Technol. A 25, 1156 (2007).
• Metall-Halbleiter-Kontakte unter Exposition reaktiver Gase, November 2005, Duisburg, Diplomarbeit

Additional Information

Computer skills:
Linux, Windows, C, C++, Origin, LaTeX, NI LabView, Office, LAMP, Samba

Language skills:
German, English

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English Version of this Site

At the moment I do not find the time to maintain this site in two languages. Most information is therefore only available in German. I apologize for the inconvenience this may cause. It is planed to make everything available to non-german readers, too.